Theoretical study on optoelectronic properties of Ga0.75Al0.25N (001) reconstruction surfaces-Reference-Cited by-同舟云学术

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Theoretical study on optoelectronic properties of Ga0.75Al0.25N (001) reconstruction surfaces

Published:2013-12 Issue: Volume:287 Page:1-7
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yang Mingzhu,Chang Benkang,Guo Jing,Hao Guanghui,Shi Feng,Wang Honggang,Wang Meishan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference22 articles.

1. Optical constants of epitaxial AlGaN films and their temperature dependence;Brunner;Journal of Applied Physics,1997

2. Prospect for high brightness III-nitride electron emitter;Machuca;Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,2000

3. Study of Cs adsorption on Ga(Mg)0.75Al0.25N (0001) surface: a first principle calculation;Yang;Applied Surface Science,2013

4. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy;Strite;Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,1991

5. Growth of cubic phase gallium nitride by modified molecular-beam epitaxy;Paisley;Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films,1989

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring the n-GaN films with Cs coating surface for low work function solar cell anode;Solar Energy;2020-11

2. Comparative study of Cs,O coadsorption on Ga0.75Al0.25N (0001) and (001) surfaces;Optical and Quantum Electronics;2019-02

3. Optical properties of Cs adsorbed wurtzite GaAs nanowires by first-principles study;Materials Research Express;2018-06-26

4. First principles study on the structural stability and optoelectronic properties of InxGa1−xAs materials with different Indium component;Materials Research Express;2018-01-25

5. Research on electronic structure and optical properties of Ga0.75Al0.25N with vacancy defects;Optik;2016-10

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