Author:
Suvanam Sethu Saveda,Usman Muhammed,Martin David,Yazdi Milad. G.,Linnarsson Margareta,Tempez Agnès,Götelid Mats,Hallén Anders
Funder
Swedish Research Council (VR)
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference41 articles.
1. The effect of the surface recombination on current gain for 4H-SiC BJT;Zhang,2009
2. Relationship between 4H-SiC/SiO2 transition layer thickness and mobility;Biggerstaff;Appl. Phys. Lett.,2009
3. Band alignment and defect states at SiC/oxide interfaces;Afanasev;J. Phys. Condens. Matter,2004
4. Intrinsic SiC/SiO2 interface states;Afanasev;Phys. Status Solidi,1997
5. Band offsets and electronic structure of SiC/SiO2 interfaces;Afanasev;J. Appl. Phys.,1996
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