Strain modulation effects on two-dimensional tellurium for advanced p-type transistor applications

Author:

Oh Jong-Sang,Kim Tae In,Kwon Hyuck-In,Park Ick-JoonORCID

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference41 articles.

1. Field-effect transistors made from solution-grown two-dimensional tellurene;Wang;Nat. Electron.,2018

2. Charge transfer dynamics of doped graphene electrodes for organic light-emitting diodes;Park;ACS Appl. Mater. Interfaces.,2022

3. Atomically thin alkane passivation layer for flexible and transparent graphene electronics;Shin;Appl. Surf. Sci.,2023

4. Band alignment of 2H-phase two-dimensional MoS2/graphene oxide van der Waals heterojunction;Park;J. Alloys Compd.,2023

5. Single-layer MoS2 transistors;Radisavljevic;Nat. Nanotechnol.,2011

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