Investigation on chemical mechanical polishing of Ga-faced GaN crystal with weak alkaline slurry-Reference-Cited by-同舟云学术

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Investigation on chemical mechanical polishing of Ga-faced GaN crystal with weak alkaline slurry

Published:2024-04 Issue: Volume:653 Page:159396
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Li Qiubo,Liu Lei,Yu Jiaoxian,Wang Shouzhi,Wang Guodong,Wang Zhongxin,Qi Zhanguo,Zhao Xuanyi,Liu Guangxia,Xu Xiangang,Zhang Lei^ORCID

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Taishan Scholar Project of Shandong Province

Science, Technology and Innovation Commission of Shenzhen Municipality

State Key Laboratory of Crystal Materials

Shandong University

Publisher

Elsevier BV

Reference28 articles.

1. A synergistic polishing technology by mixed abrasives with photocatalysis and fenton reaction;Jiang;Mater. Sci. Semicond. Proc.,2023

2. Photoelectrochemical mechanical polishing method for n-type gallium nitride;Dong;CIRP Ann.,2019

3. Atomic-scale and pit-free flattening of GaN by combination of plasma pretreatment and time-controlled chemical mechanical polishing;Deng;Appl. Phys. Lett.,2015

4. Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates;Liu;CrstEngComm,2022

5. Piezotronic effect tuned AlGaN/GaN high electron mobility transistor;Jiang;Nanotechnology,2017

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Efficient access to non-damaging GaN (0001) by inductively coupled plasma etching and chemical–mechanical polishing;Applied Surface Science;2025-01

2. Mechanism of glycine and H2O action in tribochemical mechanical polishing of single-crystal gallium nitride substrate;Applied Surface Science;2024-12

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