In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga2O3 thin films on c-plane Al2O3 via MOVPE process
Author:
Funder
Deutsche Forschungsgemeinschaft
Bundesministerium für Bildung und Forschung
OTKA
European Regional Development Fund
European Commission
Publisher
Elsevier BV
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3. T.-S. Chou, P. Seyidov, S. Bin Anooz, R. Grüneberg, T. Thi Thuy Vi, K. Irmscher, M. Albrecht, Z. Galazka, J. Schwarzkopf, A. Popp, Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE process, AIP Adv. 11 (2021) 115323. 10.1063/5.0069243.
4. Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer;Wong;Jpn. J. Appl. Phys.,2016
5. β-Ga2O3 thin films on sapphire pre-seeded by homo-self-templated buffer layer for solar-blind UV photodetector;Liu;Opt. Mater. (amst),2016
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