RF-plasma source qualification and compositional characterisation of GaNAs superlattices using SIMS-Reference-Cited by-同舟云学术

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RF-plasma source qualification and compositional characterisation of GaNAs superlattices using SIMS

Published:2006-07 Issue:19 Volume:252 Page:7218-7220
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Mulcahy C.P.A.,Barker S.J.,Williams R.S.,Hopkinson M.,Ashwin M.J.,Stavrinou P.N.,Parry G.,Biswas S.,Jones T.S.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference7 articles.

1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

2. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source

3. Localization and percolation in semiconductor alloys: GaAsN vs GaAsP

4. Bowing parameter of the band-gap energy of GaNxAs1−x

5. GaNAs grown by gas source molecular beam epitaxy

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1. Dual-functional light-emitting and photo-detecting GaAsPN heterostructures on silicon;Materials Science in Semiconductor Processing;2023-12

2. Molecular Beam Epitaxy: An Overview;Reference Module in Materials Science and Materials Engineering;2016

3. Molecular beam epitaxy;Molecular Beam Epitaxy;2013

4. Molecular Beam Epitaxy: An Overview;Comprehensive Semiconductor Science and Technology;2011

5. Influence of N on the electronic properties of GaAsN alloy films and heterostructures;Journal of Applied Physics;2007-11-15

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