Poly(t-butyl-3α-(5-norbornene-2-carbonyloxy)-7α,12α-dihydroxy-5β-cholan-24-oate-co-maleic anhydride) for a 193-nm photoresist
Author:
Publisher
Elsevier BV
Subject
Polymers and Plastics,Materials Chemistry,Organic Chemistry
Reference19 articles.
1. Molecular Design and Synthesis of 3-Oxocyclohexyl Methacrylate for ArF and KrF Excimer Laser Resist
2. Single-layer chemically amplified photoresists for 193-nm lithography
3. Novel alkaline-soluble alicyclic polymer poly(TCDMACOOH) for ArF chemically amplified positive resists
4. Synthesis of copolymers containing 3-hydroxycyclohexyl methacrylate and their application as ArF excimer laser resists
5. Maleic anhydride type ArF photoresist
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1. Optimization strategy for epoxy cross-linked molecular glass photoresist in EUV lithography;Journal of Photochemistry and Photobiology A: Chemistry;2024-08
2. Photo-sensitive bio-based copolymer containing cholic acids: novel functional materials for 248nm photoresist;Journal of Polymer Research;2018-08-02
3. Synthesis of Narrow Molecular Weight Distribution Copolymers for ArF Photoresist Materials by Nitroxide Mediated Polymerization;Macromolecular Reaction Engineering;2016-08-22
4. Synthesis of Narrow Molecular Weight Distribution Norbornene-Lactone Functionalized Polymers by Nitroxide-Mediated Polymerization: Candidates for 193-nm Photoresist Materials;Polymers;2014-02-21
5. Synthesis of polymers with a norbornane backbone by radical copolymerization of alkyl 2-norbornene-2-carboxylates for photoresist applications;Polymer Journal;2012-11-14
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