Ge on Si(001)––a hetero epitaxial playground for surface science
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference36 articles.
1. High hole mobility in SiGe alloys for device applications
2. The early history of IBM's SiGe mixed signal technology
3. Integrated circuit technology options for RFICs-present status and future directions
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5. Anomalous strain relaxation in SiGe thin films and superlattices
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1. Characterization of Hetero-Epitaxial Ge Films on Si Using Multiwavelength Micro-Raman Spectroscopy;ECS Journal of Solid State Science and Technology;2014-11-11
2. Detection of Ge and Si Intermixing in Ge/Si Using Multiwavelength Micro-Raman Spectroscopy;ECS Transactions;2014-08-12
3. Influence of graded interfaces on the exciton energy of type-I and type-II Si/Si1-x Gex quantum wires;Journal of Materials Science;2007-04
4. Strain and electronic structure of Ge nanoislands on Si(111)-7×7surface;Physical Review B;2005-12-20
5. Excitons in type‐I type‐II strained Si/Si 1– x Ge x graded quantum well;physica status solidi (c);2005-05
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