Surface characterization of 6H-SiC (0001) substrates in indentation and abrasive machining

Author:

Yin Ling,Vancoille Eric Y.J.,Ramesh Kuppuswamy,Huang Han

Publisher

Elsevier BV

Subject

Industrial and Manufacturing Engineering,Mechanical Engineering

Reference34 articles.

1. P. G. Neudeck, Recent progress in silicon carbide semiconductor electronics technology, at: http://www.lerc.nasa.gov/WWW/SiC/SiCReview.html/

2. Mechano-chemical polishing of silicon carbide single crystal with chromium (III) oxide abrasive;Kikuchi;J. Am. Ceram. Soc.,1992

3. Evaluation of surfaces of single SiC crystal polished with various kinds of particles;Watanabe;Key Engng Mater.,2003

4. Enhanced machinability of silicon carbide via microstructural design;Padture;J. Am. Ceram. Soc.,1995

5. Effect of microstructure on material-removal mechanisms and damage tolerance in abrasive machining of silicon carbide;Xu;J. Am. Ceram. Soc.,1995

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