Laser annealing of plasma implanted boron for ultra-shallow junctions in Silicon-Reference-Cited by-同舟云学术

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Laser annealing of plasma implanted boron for ultra-shallow junctions in Silicon

Published:2006-12 Issue:1-2 Volume:253 Page:13-17
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Florakis A.,Tsoukalas D.,Zergioti I.,Giannakopoulos K.,Dimitrakis P.,Papazoglou D.G.,Bennassayag G.,Bourdon H.,Halimaoui A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Semiconductor Industry Association, International Technology Roadmap for Semiconductors: 2005 Edition, International SEMATECH, Austin, TX (2005).

2. Macroscopic theory of pulsed-laser annealing. II. Dopant diffusion and segregation

3. Physical processes associated with the deactivation of dopants in laser annealed silicon

4. Ultra shallow P+/N junctions using plasma immersion ion implantation and laser annealing for sub 0.1μm CMOS devices

5. Fabrication of N+/P ultra-shallow junctions by plasma doping for 65 nm CMOS technology

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. LBIC measurement optimization to detect laser annealing induced defects in Si;Materials Science and Engineering: B;2012-11

2. Development of an industrial tool to make passivation layers for UV sensors improvement;Applied Surface Science;2012-09

3. Trends in semiconductor defect engineering at the nanoscale;Materials Science and Engineering: R: Reports;2010-11

4. Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon;Journal of Applied Physics;2009-03-15

5. Non-melt laser annealing of Plasma Implanted Boron for ultra shallow junctions in Silicon;Materials Science and Engineering: B;2008-12

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