In situ electrical characterization of the Au/n-Si Schottky barrier structure under 1.2 MeV Ar ion irradiation-Reference-Cited by-同舟云学术

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In situ electrical characterization of the Au/n-Si Schottky barrier structure under 1.2 MeV Ar ion irradiation

Published:2024-07 Issue: Volume:552 Page:165373
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Gellanki Jnaneswari,Kumari Renu,Rani Rekha,Kumar Chourasiya Hemant^ORCID,Kumar Sandeep

Funder

Inter-University Accelerator Centre

Publisher

Elsevier BV

Reference27 articles.

1. Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS 2 Field-Effect Transistors;Chee;Adv. Mater.,2019

2. High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction;Ji;Microsyst. Nanoeng.,2022

3. MoTe2-Based Schottky Barrier Photodiode Enabled by Contact Engineering;Uddin;ACS Appl. Nano Mater.,2023

4. Investigations of methane gas sensor based on biasing operation of n-ZnO nanorods/p-Si assembled diode and Pd functionalized Schottky junctions;Gupta;Sens. Actuat. B Chem.,2023

5. Metal-Semiconductor Contacts;Rhoderick,1988

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