Multiple scattering of 855 MeV electrons in amorphous and crystalline silicon: Simulations versus experiment-Reference-Cited by-同舟云学术

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Multiple scattering of 855 MeV electrons in amorphous and crystalline silicon: Simulations versus experiment

Published:2024-11 Issue: Volume:556 Page:165515
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Rojas-Lorenzo Germán^ORCID,Rubayo-Soneira Jesús^ORCID,Márquez-Mijares Maykel^ORCID,Korol Andrei V.^ORCID,Solov’yov Andrey V.^ORCID

Publisher

Elsevier BV

Reference36 articles.

1. Influence of crystal lattice on motion of energetic charged particles;Lindhard;K. Dan. Vidensk. Selsk. Mat. Fys. Medd.,1965

2. The range of alkali metal ions of kev energies in alluminum;Davies;Can. J. Chem.,1960

3. The interaction of relativistic particles with strong crystalline fields;Uggerhøj;Rev. Mod. Phys.,2005

4. Crystal Channeling and Its Application At High-Energy Accelerators;Biryukov,2013

5. Channeling and Radiation in Periodically Bent Crystals;Korol,2014

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