The role of interstitial Cu on thermoelectric properties of ZrNiSn half-Heusler compounds

Author:

Yan Ruijuan,Shen Chen,Widenmeyer Marc,Luo TingORCID,Winkler Robert,Adabifiroozjaei Esmaeil,Xie Ruiwen,Yoon SonghakORCID,Suard EmmanuelleORCID,Molina-Luna Leopoldo,Zhang Hongbin,Xie WenjieORCID,Weidenkaff Anke

Publisher

Elsevier BV

Subject

Physics and Astronomy (miscellaneous),Energy (miscellaneous),General Materials Science

Reference66 articles.

1. D. C. Creep behaviour and postcreep thermoelectric performance of the n-type half-Heusler alloy Hf0.3Zr0.7NiSn0.98Sb0.02;Al Malki;Mater. Today Phys,2019

2. Nanosized precipitates in half-Heusler TiNiSn alloy;Chai;Appl. Phys. Lett.,2012

3. Effects of doping Ni on the microstructures and thermoelectric properties of Co-excessive NbCoSn half-Heusler compounds;Yan;ACS Appl. Mater. Interfaces,2021

4. N-type TaCoSn-based half-Heuslers as promising thermoelectric materials;Li;ACS Appl. Mater. Interfaces,2019

5. Natural off-stoichiometry causes carrier doping in half-Heusler filled tetrahedral structures;Yu;Phys. Rev. B,2017

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