1. Comparison of amorphous/crystalline heterojunction solar cells based on n- and p-type crystalline silicon
2. D. Pysch, C. Meinhardt, M. Hermle and S. W. Glunz, Proceedings of the 25th EUPVSEC, 2010. “Development and understanding of the instrinsic and doped amorphous emitter layer stacks for silicon heterojunction solar cells”.
3. L. Korte, E. Conrad, H. Angermann, R. Stangl and M. Schmidt, . Proceedings of the 22nd EUPVSEC 2007, p. 859. “Overview on a-Si:H/c-Si heterojunction solar cells – physics and technology”.
4. U. Das, S. Hegedus, L. Zhang, J. Appel, J. Rand and R. Birkmire, Proceedings of the 35th IEEE Photovoltaic Specialist Conference 2010, p.1358. “Investigation of hetero-interface and junction properties in silicon heterojunction solar”.
5. K. Wakisaka, M. Taguchi, T. Sawada, M. Tanaka, T. Matsuyama, T. Matsuoka et al. , Proceedings of 22nd IEEE Photovoltaic Specialist Conference 1991, p. 887. “More that 16% solar cells with a new “HIT” (doped a-Si /non-doped a-Si /crystalline Si) structure.