Correlation between spin density and Vth instability of IGZO thin-film transistors-Reference-Cited by-同舟云学术

Correlation between spin density and Vth instability of IGZO thin-film transistors

Published:2018-11 Issue:11 Volume:18 Page:1447-1450
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Park Jee Ho^ORCID,Lee Sohyung,Lee Hee Sung,Kim Sung Ki,Park Kwon-Shik,Yoon Soo-Young

Funder

LG Display

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference23 articles.

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2. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress;Niang;Appl. Phys. Lett.,2016

3. Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors;Oh;Appl. Phys. Lett.,2016

4. The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors;Su;Appl. Phys. Lett.,2017

5. A direct method to extract transient sub-gap density of state (DOS) based on dual gate pulse spectroscopy;Dai;Sci. Rep.,2016

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1. Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT);Scientific Reports;2024-05-02

2. A low-temperature photoresist-based film-profile engineering scheme for fabricating bottom- and double-gated indium–gallium–zinc oxide TFTs;Japanese Journal of Applied Physics;2024-02-14

3. Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high G_m,max of 559 µS/µm at V_DS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec;2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits);2022-06-12

4. Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors;IEEE Transactions on Electron Devices;2022-05

5. Defect Engineering for High Performance and Extremely Reliable a‐IGZO Thin‐Film Transistor in QD‐OLED;Advanced Electronic Materials;2022-02-18