Fabrication and interface properties of amorphous Ga2O3/GaAs heterojunction-Reference-Cited by-同舟云学术

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Fabrication and interface properties of amorphous Ga2O3/GaAs heterojunction

Published:2024-06 Issue: Volume:62 Page:29-39
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Yang Ruo-Yun,Ma Hong-Ping^ORCID,Cao Xiyuan^ORCID,Zuo Yuanhui,Zhao Xue-Feng,Yang Lei,Zhang Qingchun

Publisher

Elsevier BV

Reference40 articles.

1. Ga2O3 films for electronic and optoelectronic applications;Passlack;J. Appl. Phys.,1995

2. Electroreflectance study on optical anisotropy in β-Ga2O3;Onuma;Appl. Phys. Lett.,2019

3. The physics and chemistry of the Schottky barrier height;Tung;Appl. Phys. Rev.,2014

4. Ion irradiation of III–V semiconductor surfaces: from self-assembled nanostructures to plasmonic crystals;Kang;Appl. Phys. Rev.,2019

5. First demonstration of hetero-epitaxial ε-Ga2O3 MOSFETs by MOCVD and a F-plasma surface doping;Chen;Appl. Surf. Sci.,2022

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1. Real, imaginary and complex branches of Lamb waves in p-type piezoelectric semiconductor GaAs plate: Numerical and experimental investigation;Materials Science in Semiconductor Processing;2024-11

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