Author:
Canali C.,Castaldo F.,Fantini F.,Ogliari D.,Vanzi M.,Zicolillo M.,Zanoni E.
Reference11 articles.
1. Reliability and degradation of active III–V semiconductor devices;Davey,1981
2. The reliability of GaAs FETs;Irvin,1982
3. L. Binotto and M. Zicolillo, to be published.
4. Schottky barrier height variation with metallurgical reactions in aluminum-titanium-gallium arsenide contacts
Cited by
15 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献