Abrupt changes in the graphene on Ge(001) system at the onset of surface melting-Reference-Cited by-同舟云学术

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Abrupt changes in the graphene on Ge(001) system at the onset of surface melting

Published:2019-04 Issue: Volume:145 Page:345-351
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Persichetti L.,Di Gaspare L.,Fabbri F.,Scaparro A.M.,Notargiacomo A.,Sgarlata A.,Fanfoni M.,Miseikis V.,Coletti C.,De Seta M.

Funder

European Union's Horizon

GrapheneCore1

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference59 articles.

1. Nanometer CMOS;Schwierz,2010

2. International Roadmap for Devices and Systems, www.irds.ieee.org2017.

3. CMOS-compatible graphene photodetector covering all optical communication bands;Pospischil;Nat. Photon.,2013

4. Light-emitting diodes by band-structure engineering in van der Waals heterostructures;Withers;Nat. Mater.,2015

5. Theoretical investigation of graphene-based photonic modulators;Gosciniak;Sci. Rep.,2013

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Probing post-growth hydrogen intercalation and H2 nanobubbles formation in graphene on Ge(110);Materials Science in Semiconductor Processing;2024-04

2. Tracking interfacial changes of graphene/Ge(1 1 0) during in-vacuum annealing;Applied Surface Science;2022-11

3. Formation of GeO2 under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor;Molecules;2022-06-06

4. CVD growth of high-quality graphene over Ge (100) by annihilation of thermal pits;Carbon;2021-04

5. Tuning the Doping of Epitaxial Graphene on a Conventional Semiconductor via Substrate Surface Reconstruction;The Journal of Physical Chemistry Letters;2021-01-26

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