Author:
McDougall D.,Hattab H.,Hershberger M.T.,Hupalo M.,Horn von Hoegen M.,Thiel P.A.,Tringides M.C.
Funder
U.S. Department of Energy
Office of Science, Basic Energy Sciences
Materials Science and Engineering Division
U.S. DOE
Leopoldina Fellowship
German National Academy of Sciences
Subject
General Chemistry,General Materials Science
Reference27 articles.
1. Contacting graphene;Robinson;Appl. Phys. Lett.,2011
2. Contact resistance in few and multilayer graphene devices;Venugopal;Appl. Phys. Lett.,2010
3. Metal/graphene contact as a performance killer of ultra-high mobility graphene—Analysis of intrinsic mobility and contact resistance;Nagashio;Tech. Dig. Int. Electron Devices Meet.,2009
4. Contact resistance in graphene-based devices;Russo;Phys. E,2010
5. Top-gated graphene field-effect transistors using graphene on Si (111) wafers;Moon;IEEE Electron Device Lett.,2010
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