Impurity-related binding energy in strained (In,Ga)N asymmetric coupled QWs under strong built-in electric field
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference18 articles.
1. Band gap of InxGa1−xN: A first principles analysis
2. Group III-Nitride Semiconductor Compounds;Gill,1998
3. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes;Nakamura,2000
4. Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green
5. Optical and microstructural studies of InGaN∕GaN single-quantum-well structures
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1. Shallow-donor impurity states in type-II InGaN-ZnSnN2/GaN quantum wells under hydrostatic pressure effect;Journal of the Korean Physical Society;2024-05-28
2. Built-in electric field and hydrostatic pressure effects on exciton states in a wurtzite (In,Ga)N/GaN coupled double quantum well;Journal of the Korean Physical Society;2023-08-02
3. Exploring the electronic properties of shallow donor impurities in modified ∩-shaped potential: effects of applied electric field, parabolicity, compositions, and thickness;The European Physical Journal B;2023-06
4. Modeling of the Stark shift and binding energy of shallow donor-impurity in $$\mathrm{GaAs}/{\mathrm{Al}}_{0.3}{\mathrm{Ga}}_{0.7}\mathrm{As}$$ core/shell quantum disk: effects of lateral directed applied electric field including the core/shell sizes;The European Physical Journal Plus;2023-05-24
5. Tridimensional electric field effect on diamagnetic susceptibility and polarisability of a donor impurity in a double quantum dot;Philosophical Magazine;2023-03-02
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