Influence of buffer layer thickness and epilayer’s growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD-Reference-Cited by-同舟云学术

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Influence of buffer layer thickness and epilayer’s growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD

Published:2011-06 Issue:12 Volume:151 Page:904-907
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Liu Xia,Song Hang,Miao Guoqing,Jiang Hong,Cao Lianzhen,Sun Xiaojuan,Li Dabing,Chen Yiren,Li Zhiming

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference14 articles.

1. 1.3 μm InAsyP1−y/InP strained‐layer quantum well laser diodes grown by metalorganic chemical vapor deposition

2. Growth and characterization of InAs microclusters in InP and InAsP/InP heterostructures by low pressure MOCVD using tertiarybutylarsine

3. Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for 1.55μm applications: Growth, structural, and optical properties

4. Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy

5. High-quality InAsyP1−y step-graded buffer by molecular-beam epitaxy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties;Applied Physics A;2017-03-07

2. Design and performance analysis of extended wavelength InGaAs near-infrared photodetectors;Japanese Journal of Applied Physics;2015-09-18

3. STRUCTURAL, ELECTRONIC, THERMODYNAMIC AND THERMAL PROPERTIES OF ZINC-BLENDE InP, InAs AND THEIR InAsx P1-x TERNARY ALLOYS VIA FIRST PRINCIPLES CALCULATIONS;International Journal of Modern Physics B;2013-10-15

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