Kondo-semiconductor to Kondo-impurity transition in the heat capacity of Yb1−xLuxB12-Reference-Cited by-同舟云学术

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Kondo-semiconductor to Kondo-impurity transition in the heat capacity of Yb1−xLuxB12

Published:1999-01 Issue: Volume:259-261 Page:312-314
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Iga F,Hiura S,Klijn J,Shimizu N,Takabatake T,Ito M,Matsumoto Y,Masaki F,Suzuki T,Fujita T

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Mixed valence properties of YbB12

2. Kondo state in the alloy system Lu1−xYbxB12

3. Gap State in YbB 12 and SmB 6 : Real Kondo Insulators

4. Rare-earth compounds with mixed valencies

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Introduction;Springer Theses;2021

2. Unconventional Quantum Oscillations in YbB$$_{12}$$;Springer Theses;2021

3. Unconventional thermal metallic state of charge-neutral fermions in an insulator;Nature Physics;2019-07-01

4. Effect of defects in the rare-earth sublattice of the Kondo insulator YbB12 on its spectral characteristics and magnetic susceptibility;Journal of Experimental and Theoretical Physics;2017-06

5. Hard x-ray photoemission study of Yb1−xZrxB12: the effects of electron doping on the Kondo insulator YbB12;Journal of Physics: Condensed Matter;2017-05-26

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