Piezospectroscopic analysis of the hydrogen–carbon complexes in silicon-Reference-Cited by-同舟云学术

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Piezospectroscopic analysis of the hydrogen–carbon complexes in silicon

Published:2001-12 Issue: Volume:308-310 Page:139-142
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Andersen O,Dobaczewski L,Peaker A.R,Bonde Nielsen K,Hourahine B,Jones R,Briddon P.R,Öberg S

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Charge-state-dependent hydrogen-carbon-related deep donor in crystalline silicon

2. Interaction of hydrogen with substitutional and interstitial carbon defects in silicon

3. Nonradiative capture and recombination by multiphonon emission in GaAs and GaP

4. Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors

5. Impact ionization of Se‐relatedDXcenters in AlGaAs

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon;Journal of Applied Physics;2018-09-28

2. Effect of proton fluence on point defect formation in epitaxial silicon for radiation detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2005-10

3. Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors;Journal of Applied Physics;2004-11

4. Bond-center hydrogen in diluteSi1−xGexalloys: Laplace deep-level transient spectroscopy;Physical Review B;2003-07-30

5. Electrical activity of carbon-hydrogen centers in Si;Physical Review B;2002-12-13

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