Enhancement mode β-(Al0.19Ga0.81)2O3/Ga2O3 HFETs with superlattice back-barrier layer-Reference-Cited by-同舟云学术

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Enhancement mode β-(Al0.19Ga0.81)2O3/Ga2O3 HFETs with superlattice back-barrier layer

Published:2024-05 Issue: Volume:189 Page:207802
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Atmaca Gökhan,Cha Ho-Young

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Reference23 articles.

1. Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS;Pearton;J. Appl. Phys.,2018

2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates;Higashiwaki;Appl. Phys. Lett.,2012

3. 3.8-MV/cm breakdown strength of MOVPE-grown Sn-doped β-Ga2O3 MOSFETs;Green;IEEE Electron. Device Lett.,2016

4. Lateral β-Ga2O3 MOSFETs with high power figure of merit of 277 MW/cm2;Lv;IEEE Electron. Device Lett.,2020

5. Enhancement mode β-(AlxGa1-x)2O3/Ga2O3 heterostructure FET (HFET) with high transconductance and cutoff frequency;Vaidya;IEEE Electron. Device Lett.,2021

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