GSE and GWE techniques to improve on (ION) current and ambipolar conduction of tunnel FET(TFET) device: A comprehensive review-Reference-Cited by-同舟云学术

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GSE and GWE techniques to improve on (ION) current and ambipolar conduction of tunnel FET(TFET) device: A comprehensive review

Published:2024-07 Issue: Volume:191 Page:207865
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Reddy Nelaturi Nagendra,Raut Pratikhya,Panda Deepak Kumar^ORCID

Publisher

Elsevier BV

Reference31 articles.

1. Tunnel field-effect transistors as energy-efficient electronic switches;Ionescu;Nature,2011

2. Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec;Choi;IEEE Electron. Device Lett.,2007

3. Analytical drain current model development of twin gate TFET in subthreshold and super threshold regions;Raut;Microelectron. J.,2023

4. Effect of pocket doping and annealing schemes on the source-pocket tunnel field-effect transistor;Jhaveri;IEEE Trans. Electron. Dev.,2011

5. A comprehensive review on tunnel field-effect transistor (TFET) based biosensors: recent advances and future prospects on device structure and sensitivity;Reddy;Silicon,2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-bandgap material engineering based TFET device for next-generation biosensor application-A comprehensive review on device structure and sensitivity;Micro and Nanostructures;2024-10

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