An inverted T-shaped vertical tunneling InN/In Ga1-N heterojunction TFET with high current ratio
Author:
Funder
Tianjin Science and Technology Program
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials
Reference31 articles.
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5. New subthreshold performance analysis of germanium based dual halo gate stacked triple material surrounding gate tunnel field effect transistor;Venkatesh;Superlattices Microstruct,2019
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