Characterisation of InAs/GaAs short period superlattices using column ratio mapping in aberration-corrected scanning transmission electron microscopy-Reference-Cited by-同舟云学术

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Characterisation of InAs/GaAs short period superlattices using column ratio mapping in aberration-corrected scanning transmission electron microscopy

Published:2012-10 Issue:10 Volume:43 Page:1068-1072
ISSN:0968-4328
Container-title:Micron
language:en
Short-container-title:Micron

Author:

Robb Paul D.,Finnie Michael,Craven Alan J.

Publisher

Elsevier BV

Subject

Cell Biology,Structural Biology,General Physics and Astronomy,General Materials Science

Reference26 articles.

1. Molecular beam epitaxy technology of III–V compound semiconductors for optoelectronic applications;Cheng;Proceedings of the IEEE,1997

2. The Physics of Low-dimensional Semiconductors;Davies,2005

3. Applications of MBE grown PHEMTs;DiLorenzo;Journal of Crystal Growth,1997

4. Scattering of Å-scale electron probes in silicon;Dwyer;Ultramicroscopy,2003

5. Atomic structure of InAs and InGaAs quantum dots determined by cross-sectional scanning tunneling microscopy;Eisele;Journal of Crystal Growth,2003

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1. Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy;Applied Physics Letters;2021-02-08

2. Oxygen octahedra picker: A software tool to extract quantitative information from STEM images;Ultramicroscopy;2016-09

3. Tuning Phonon Transport: From Interfaces to Nanostructures;Journal of Heat Transfer;2013-05-16

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