Theory of tunneling into interface states
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference34 articles.
1. Electron Tunneling between a Metal and a Semiconductor: Characteristics of Al‐Al2O3‐SnTe and −GeTe Junctions
2. New Type of Negative Resistance in Barrier Tunneling
3. Molecular Vibration Spectra by Electron Tunneling
4. Theory of Inelastic Electron-Molecule Interactions in Tunnel Junctions
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1. On the Fluctuation–Dissipation of the Oxide Trapped Charge in a MOSFET Operated Down to Deep Cryogenic Temperatures;Fluctuation and Noise Letters;2023-06-16
2. Effects of the interfacial states on the spin-dependent tunneling of Mn3Al-based magnetic tunnel junction;Journal of Physics D: Applied Physics;2021-01-13
3. Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics;IEEE Transactions on Device and Materials Reliability;2020-09
4. Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides;IEEE Transactions on Electron Devices;2020-09
5. Effect of traps-to-gate tunnel communication on C-V characteristics of MIS capacitors;Microelectronic Engineering;2019-07
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