Doping dependence of the barrier height of palladium-silicide Schottky-diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. METALS CONTACTS ON CLEAVED SILICON SURFACES
2. Surface‐State and Interface Effects in Schottky Barriers at n‐Type Silicon Surfaces
3. Photoelectric Determination of the Image Force Dielectric Constant For Hot Electrons in Schottky Barriers
4. Silicon Schottky Barrier Diode with Near-Ideal I-V Characteristics
5. Metallurgical properties and electrical characteristics of palladium silicide-silicon contacts
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2. Electrical characteristics of AlxGa1−xN Schottky diodes prepared by a two-step surface treatment;Journal of Applied Physics;2004-09-15
3. Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures;Physica B: Condensed Matter;2001-12
4. Recent advances in Schottky barrier concepts;Materials Science and Engineering: R: Reports;2001-11
5. Thermal stability of Re Schottky contacts to 6H-SiC;IEEE Electron Device Letters;2000-12
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