On the role of fluorine in BF2+ implanted silicon-Reference-Cited by-同舟云学术

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On the role of fluorine in BF2+ implanted silicon

Published:1992-04 Issue:4 Volume:35 Page:535-540
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Virdi G.S.,Rauthan C.M.S.,Pathak B.C.,Khokle W.S.,Gupta S.K.,Lal Krishan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. MOS Device and technology constraints in VLSI

2. Channeling in low energy boron ion implantation

3. Channeling,1973

4. High-resolution imaging of ion-implantation damage and mechanism of amortization in semiconductors

5. Crystalline to amorphous transformation in ion‐implanted silicon: a composite model

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion implantation of boric molecules for silicon solar cells;Solar Energy Materials and Solar Cells;2015-11

2. Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF2+ ion implantation into silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-01

3. Doping characteristics of BF/sub 2//sup +/ implants in >100< and >111< silicon;IEEE Transactions on Electron Devices;2001

4. Harnessing reverse annealing phenomenon for shallow p-n junction formation;Journal of Applied Physics;1997-11-15

5. Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implants;Thin Solid Films;1997-10

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