Study of Self Heating Effect in the wake of complete and partial bottom dielectric insertion under 5 nm Stacked Nanosheet Transistor
Author:
Publisher
Elsevier BV
Reference28 articles.
1. Compact model for geometry dependent mobility in nanosheet FETs;Dasgupta;IEEE Electron Device Lett.,2020
2. Optimized substrate for improved performance of stacked nanosheet field effect transistor;Jegadheesan;IEEE Trans. Electron Devices,2020
3. Layout design correlated with self-heating effect in stacked nanosheet transistors;Cai;IEEE Trans. Electron Devices,2018
4. Technology/system codesign and benchmarking for lateral and vertical GAA nanowire FETs at 5-nm technology node;Pan;IEEE Trans. Electron Device,2015
5. FinFET evolution toward stacked-nanowire FET for CMOS technology scaling;Zheng;IEEE Trans. Electron Device,2015
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Thermal Profile Prediction Methodology for Nanosheet Circuits Featuring Cross-Layer Thermal Coupling Effect;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
2. Channel engineering for optimizing the electro‐thermal characteristics in p‐type GAA nanosheet transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-03
3. Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression;Solid-State Electronics;2023-12
4. Guest Editorial : 26th International Symposium on VLSI Design and Test 2022;Memories - Materials, Devices, Circuits and Systems;2023-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3