Composition mapping in InGaN by scanning transmission electron microscopy-Reference-Cited by-同舟云学术

Composition mapping in InGaN by scanning transmission electron microscopy

Published:2011-07 Issue:8 Volume:111 Page:1316-1327
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Rosenauer Andreas,Mehrtens Thorsten,Müller Knut,Gries Katharina,Schowalter Marco,Venkata Satyam Parlapalli,Bley Stephanie,Tessarek Christian,Hommel Detlef,Sebald Katrin,Seyfried Moritz,Gutowski Jürgen,Avramescu Adrian,Engl Karl,Lutgen Stephan

Funder

Deutsche Forschungsgemeinschaft

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. Exciton localization and the Stokes’ shift in InGaN epilayers

2. Exciton localization in InGaN quantum well devices

3. Suppression of phase separation in InGaN due to elastic strain

4. Atomic structure and phase stability ofInxGa1−xNrandom alloys calculated using a valence-force-field method

5. Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy

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