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Scanning electron microscope measurement of width and shape of 10 nm patterned lines using a JMONSEL-modeled library

  • Published:2015-07 Issue: Volume:154 Page:15-28
  • ISSN:0304-3991
  • Container-title:Ultramicroscopy
  • language:en
  • Short-container-title:Ultramicroscopy

Author:

Villarrubia J.S.,Vladár A.E.,Ming B.,Kline R.J.,Sunday D.F.,Chawla J.S.,List S.

Funder

NIST's Physical Measurement and (before 2011) Manufacturing Engineering Laboratories

SEMATECH

E.I. DuPont de Nemours & Co.

The Dow Chemical Company

Northwestern University

U.S. Department of Energy (DOE) Office of Science by Argonne National Laboratory

U.S. DOE

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference64 articles.

1. International Technology Roadmap for Semiconductors, Metrology Section, table MET3, public.itrs.net, 2013.

2. Edge Determination for Polycrystalline Silicon Lines on Gate Oxide;Villarrubia;Proc. SPIE,2001

3. Scanning electron microscope analog of scatterometry;Villarrubia;Proc. SPIE,2002

4. Dimensional metrology of resist lines using a SEM model-based library approach;Villarrubia;Proc. SPIE,2004

5. Scanning electron microscope dimensional metrology using a model-based library;Villarrubia;Surf. Interface Anal.,2005

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