HfO2-based ferroelectric thin film and memory device applications in the post-Moore era: A review
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Multidisciplinary
Reference139 articles.
1. Ferroelectric thin films: review of materials, properties, and applications;Setter;J. Appl. Phys.,2006
2. Thin-film ferroelectric materials and their applications;Martin;Nat. Rev. Mater.,2016
3. Ferroelectric thin films for micro-sensors and actuators: a review;Muralt;J. Micromech. Microeng.,2000
4. Effect of hydrogen on Pb(Zr, Ti)O3-based ferroelectric capacitors;Aggarwal;Appl. Phys. Lett.,1998
5. Ferroelectric-Gate Field Effect Transistor Memories;Park,2016
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