Transition and rare earth elements used as luminescent probes in studying ion-implanted III–V and II–VI semiconductors-Reference-Cited by-同舟云学术

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Transition and rare earth elements used as luminescent probes in studying ion-implanted III–V and II–VI semiconductors

Published:1989-03 Issue:1-4 Volume:39 Page:492-495
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Gippius A.A.,Ushakov V.V.,Yakimkin V.N.,Vavilov V.S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference5 articles.

1. Multiplets of Transition Metal Ions in Crystals;Sugano,1970

2. Ion implantation and luminescence

3. Advances in Electrical and Electronic Physics;Kaufman,1982

4. 13th Int. Conf. Defects in Semiconductors;Ennen,1985

5. Proc. 14th Int. Conf. Defects in Semiconductors;Gippius,1986

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1. Formation and optical properties of CdSSe semiconductor nanocrystals in the silicate glass matrix;Physics of the Solid State;2009-10

2. Multilayer TiN/Ti films for high-temperature annealing of GaAs;Thin Solid Films;2002-03

3. Ion implantation of porous gallium phosphide;Semiconductors;1998-08

4. Luminescent characterization of radiation damage and impurities in ion-implanted natural diamond;Diamond and Related Materials;1993-04

5. Chapter 5 Transition Metals in III/V Compounds;Imperfections in III/V Materials;1993

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