Recombination enhanced suppression of deep trap accumulation in silicon during He+ ion implantation
Author:
Publisher
Elsevier BV
Reference16 articles.
1. Recombination-enhanced migration of interstitial aluminum in silicon
2. Recombination enhanced defect annealing in n-InP
3. Low temperature annealing of ion-implantation-induced defects in GaAs by minority carrier injection
4. Recombination enhanced defect reactions
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles;Journal of Physics: Condensed Matter;2003-09-19
2. High-energy ion-implantation-induced gettering of copper in silicon beyond the projected ion range: The trans-projected-range effect;Journal of Applied Physics;2000-11-15
3. Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon;Applied Physics Letters;2000-05-15
4. Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si;Journal of Applied Physics;1998-09-01
5. A deep level transient spectroscopy characterization of defects induced in epitaxially grown n-Si by low-energy He-ion bombardment;Journal of Applied Physics;1998-05-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.7亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2025 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3