Atomic-scale revealing defects in ion irradiated 4H-SiC-Reference-Cited by-同舟云学术

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Atomic-scale revealing defects in ion irradiated 4H-SiC

Published:2023-09 Issue: Volume:203 Page:113125
ISSN:1044-5803
Container-title:Materials Characterization
language:en
Short-container-title:Materials Characterization

Author:

Nan Shuai,Xiao Meng,Guan Zhou,Feng Chuangshi,Huo Chao,Li Gong,Zhai Pengfei,Zhang Fuxiang

Funder

National Key Research and Development Program of China

University of Tennessee

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference29 articles.

1. A tough, thermally conductive silicon carbide composite with high strength up to 1600 °C in air;Ishikawa;Science,1998

2. Radiation effects in SiC for nuclear structural applications;Katoh;Curr. Opinion Solid State Mater. Sci.,2012

3. Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance;Imada;J. Nucl. Mater.,2015

4. Silicon carbide and its composites for nuclear applications – historical overview;Katoh;J. Nucl. Mater.,2019

5. Materials science - silicon carbide in contention;Madar;Nature,2004

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