4H-SiC power devices for use in power electronic motor control-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

4H-SiC power devices for use in power electronic motor control

Published:1998-12 Issue:12 Volume:42 Page:2165-2176
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Casady J.B,Agarwal A.K,Seshadri S,Siergiej R.R,Rowland L.B,MacMillan M.F,Sheridan D.C,Sanger P.A,Brandt C.D

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Agarwal, A. K., Augustine, G., Balakrishna, V., Brandt, C. D., Burk, A. A., Chen, L.-S., Clarke, R. C., Esker, P. M., Hobgood, H. M., Hopkins, R. H., Morse, A. W., Rowland, L. B., Seshadri, S., Siergiej, R. R., Smith, T. J. Jr. and Sriram, S., IEDM Tech. Dig., 1996, 9.1.1

2. Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors

3. Silicon carbide and related materials;Palmour;Institute of Physics Conf. Ser.,1994

4. Shenoy, J. N., Melloch, M. R. and Cooper, J. A. Jr., High-voltage, double-implanted power MOSFETs in 6H-SiC. Device Research Conference, Late paper, 1996

5. Ramungul, N., Chow, T. P., Ghezzo, M., Kretchmer J. and Hennessy, W., A fully planarized, 6H-SiC UMOS insulated-gate bipolar transistor. Device Res. Conf., 1996, p. 56

Cited by 53 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Displacement damage effect of proton irradiation on vertical β-Ga2O3 and SiC Schottky barrier diodes (SBDs);Journal of Science: Advanced Materials and Devices;2024-09

2. Stacking faults in 4H–SiC epilayers and IGBTs;Materials Science in Semiconductor Processing;2024-07

3. THE MODELLING AND ANALYSIS OF TEMPERATURE-DEPENDENT SILICON AND SILICON CARBIDE-BASED POWER DEVICE PERFORMANCE FOR HIGH-VOLTAGE APPLICATIONS USING MACHINE-LEARNING APPROACHES;Suranaree Journal of Science and Technology;2024-05-13

4. PROPERTY ENHANCEMENT OF VANADIUM DOPED SILICON CARBIDE: A COMPUTATIONAL STUDY;Suranaree Journal of Science and Technology;2024-02-05

5. The extraction of gate oxide thickness on silicon carbide wide-bandgap material using thermal oxidation based regression techniques for high-power applications;AIP Conference Proceedings;2024

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3