Characteristics of Si-based MSM photodetectors with an amorphous-crystalline heterojunction-Reference-Cited by-同舟云学术

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Characteristics of Si-based MSM photodetectors with an amorphous-crystalline heterojunction

Published:1997-11 Issue:11 Volume:41 Page:1693-1697
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Laih Li-Hong,Wang Jyh-Cheng,Chen Yen-Ann,Jen Tean-Sen,Tsay Wen-Chin,Hong Jyh-Wong

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. 11 GHz bandwidth optical integrated receivers using GaAs MESFET and MSM technology

2. A 3 GHz transimpedance OEIC receiver for 1.3-1.55 mu m fiber-optic systems

3. An investigation of the optoelectronic response of GaAs/InGaAs MSM photodetectors

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modification and Modeling of Ni/Si Interface for Photodetector Applications;2006 IEEE International Conference on Semiconductor Electronics;2006-11

2. Suppressing dark-current in planar Si-based MSM photodetector with alternated i-a-Si:H∕i-a-SiGe:H grade superlattice-like layers;Electronics Letters;2005

3. High-sensitivity planar Si-based MSM photodetector with very thin amorphous silicon-alloy quantum-well-like barrier layers;IEEE Photonics Technology Letters;2003-07

4. High-speed Si-based metal-semiconductor-metal photodetectors with an additional composition-graded i-a-Si1−xGex:H layer;Solid-State Electronics;2002-12

5. Improving characteristics of Si-based trench-electrode metal-semiconductor-metal photodetectors using self-aligned process;IEE Proceedings - Optoelectronics;2001-08-01

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