Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition

Published:2000-09 Issue:9 Volume:44 Page:1669-1677
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lachab M,Youn D.-H,Qhalid Fareed R.S,Wang T,Sakai S

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

3. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes

4. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

5. Group III nitride semiconductors for short wavelength light-emitting devices

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1. Effects of Cp2Mg molar flow rate on structural, optical, and electrical properties of semipolar Mg-doped p-AlGaN epi-layers;Optical Materials;2024-06

2. Understanding the influence of physical properties on the mechanical characteristics of Mg-doped GaN thin films;Materials Chemistry and Physics;2023-10

3. Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions;Nanomaterials;2021-01-15

4. Effects of Ⅴ/Ⅲ ratio and Cp2Mg flow rate on characteristics of non-polar a-plane Mg-delta-doped p-AlGaN epi-layer;Superlattices and Microstructures;2020-09

5. Growth and characterization of MoS2/n-GaN and MoS2/p-GaN vertical heterostructure with wafer scale homogeneity;Solid-State Electronics;2020-03

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