High-light-yield and fast-response β-Ga2O3–Al2O3 thick-film scintillators epitaxially grown via chemical vapor deposition
-
Published:2024-08
Issue:
Volume:369
Page:136721
-
ISSN:0167-577X
-
Container-title:Materials Letters
-
language:en
-
Short-container-title:Materials Letters
Author:
Yamaguchi Naoya,
Ito AkihikoORCID
Reference17 articles.
1. β-Ga2O3 material properties, growth technologies, and devices: a review;Higashiwaki;AAPPS Bull.,2022
2. C. Venkata Prasad, M. Labed, M.T. Alam Shamim Shaikh, J.Y. Min, T.H. Vu Nguyen, W. Song, K.J. Kim, Y.S. Rim, Ga2O3-based X-ray detector and scintillators: A review, Mater. Today Phys. 35 (2023) 101095. https://doi.org/10.1016/j.mtphys.2023.101095.
3. Fast and high light yield scintillation in the Ga2O3 semiconductor material;Yanagida;Appl. Phys. Express,2016
4. Comparative study of scintillation properties of Ga2O3 single crystals and ceramics;Usui;J. Lumin.,2018
5. Large-size β-Ga2O3 single crystals and wafers;Víllora;J. Cryst. Growth,2004