Effects of Mg-doping on characteristics of semi-polar (112¯2) plane p-AlGaN films-Reference-Cited by-同舟云学术

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Effects of Mg-doping on characteristics of semi-polar (112¯2) plane p-AlGaN films

Published:2017-12 Issue: Volume:209 Page:472-475
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Dai Qian,Zhang Xiong,Wu Zili,Yang Gang,Liang Zongwen,Zhao Jianguo,Cui Yiping

Funder

Science and Technology Department of Jiangsu Province

Fundamental Research Funds for the Central Universities

Innovation Project for Graduate Student of Jiangsu Province

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells

2. P-type doping of semipolar GaN(11$ \bar 2 $2) by plasma-assisted molecular-beam epitaxy

3. Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

4. First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode onm-Plane Sapphire with AlGaN Multiple Quantum Wells

5. Effects of Si-doping on characteristics of semi-polar (112̅2) plane Al0.45Ga0.55N epi-layers

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Cp2Mg molar flow rate on structural, optical, and electrical properties of semipolar Mg-doped p-AlGaN epi-layers;Optical Materials;2024-06

2. Enhanced performance of (112¯2) plane p-AlGaN grown with indium surfactant;Materials Letters;2022-10

3. Growth of nonpolar a-plane AlGaN epilayer on Al-composition graded-AlGaN buffer layer and characterization of its surface morphology and crystalline quality;Materials Research Express;2022-10-01

4. Magnesium doped semipolar (11–22) p-type gallium nitride: Impact of dopant concentration variants towards grain size distributions and crystalline quality;Thin Solid Films;2022-01

5. Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials;Journal of Semiconductors;2019-12-01

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