Experimental circuit design and TCAD analysis of ion sensitive field effect transistor (ISFET) for pH sensing-Reference-Cited by-同舟云学术

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Experimental circuit design and TCAD analysis of ion sensitive field effect transistor (ISFET) for pH sensing

Published:2024-01 Issue: Volume:299 Page:116951
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Pathak Yash,Mishra Piyush,Sharma Megha,Solanki Shipra,Agarwal Ved Varun,Chaujar Rishu,Malhotra Bansi Dhar

Funder

Council of Scientific and Industrial Research Human Resource Development Group

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference40 articles.

1. Development of an ion-sensitive solid-state device for neurophysiological measurements;Bergveld;IEEE Trans. Biomed. Eng.,1970

2. Counteracting threshold-voltage drift in ion-selective field effect transistors (ISFETs) using threshold-setting ion implantation;Elyasi;IEEE J. Electron Devices Soc.,2018

3. Modeling and simulation of ISFET using TCAD tool for various sensing films;Choksi,2017

4. Study of the electrolyte-insulator-semiconductor field-effect transistor (EISFET) with applications in biosensor design;Shinwari;Microelectron. Reliab.,2007

5. A general model to describe the electrostatic potential at electrolyte oxide interfaces;Van Hal;Adv. Colloid Interface Sci.,1996

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