Non-volatile memory device using a polymer modified nanocrystal-Reference-Cited by-同舟云学术

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Non-volatile memory device using a polymer modified nanocrystal

Published:2011-11 Issue:19 Volume:176 Page:1552-1555
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Kiazadeh A.,Gomes H.L.,da Costa A.M. Rosa,Moreira J.A.,de Leeuw D.M.,Meskers S.C.J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. New conduction and reversible memory phenomena in thin insulating films

2. Étude des propriétés électriques des structures AlAl2O3–métal

3. A theory for negative resistance and memory effects in thin insulating films and its application to Au-ZnS-Au devices

4. Memory switching in thermally grown titanium oxide films

5. Nonvolatile memory device based on Ag nanoparticle: Characteristics improvement

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic force microscopy of titanium oxide nanostructures with forming-free resistive switching;IOP Conference Series: Materials Science and Engineering;2019-12-01

2. Resistive switching device based on water and zinc oxide heterojunction for soft memory applications;Materials Science and Engineering: B;2019-07

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