Molecular dynamics simulations of nanoindentation of -SiC with diamond indenter
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference40 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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5. Atomistic Modelling of Structures of Tilt Grain Boundaries and Antiphase Boundaries in ?-Silicon Carbide
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