Author:
Sharma Megha,Kumar Bhavya,Chaujar Rishu
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference37 articles.
1. A. Abdelmoneam, B. Iñiguez, M. Fedawy, “Compact modelling of quantum confinement in III-V gate all around nanowire MOSFET,” in: 2018 IEEE Spanish Conference on Electron Devices (CDE), 2018, pp. 1-4, DOI: 10.1109/CDE.2018.8597131.
2. O. Muscato, T. Castiglione, and A. Coco, “Hydrodynamic modeling of electron transport in gated silicon nanowires transistors,” Atti della Accademia Peloritana Dei Pericolanti-Classe di Scienze Fisiche, vol. 97, no. S1, 2019, DOI: 10.1478/AAPP.97S1A18.
3. Scaling theory for cylindrical, fully depleted, surrounding-gate MOSFETs;Auth;IEEE Electron Device Lett.,1997
4. Analog and RF performance investigation of cylindrical surrounding-gate MOSFET with an analytical pseudo-2D model;Sarkar;J. Comput. Electron,2012
5. Comprehensive analysis of sub-20 nm black phosphorus-based junctionless-recessed channel MOSFET for analog/RF applications;Kumar;Superlattice Microst.,2018
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献