Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devices-Reference-Cited by-同舟云学术

Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devices

Published:2001-05 Issue: Volume:175-176 Page:726-733
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Mur P,Semeria M.N,Olivier M,Papon A.M,Leroux Ch,Reimbold G,Gentile P,Magnea N,Baron T,Clerc R,Ghibaudo G

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

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4. F. Tardif, T. Lardin, Y. Abolafia, A. Danel, P. Boelen, C. Cowache, I.N. Kashkoush, R. Novak, UCPSS’99 (1999) 19.

5. M. Imai, N. Noro, T. Kakuta, S. Kaushal, T. Tsuda, D. Marks, in: Proceedings of the 5th International Conference on Advanced Thermal Processing of Semiconductors, RTP’97, New Orlean, 1997, p. 135.

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