Radiation hardness of SiC based ions detectors for influence of the relative protons-Reference-Cited by-同舟云学术

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Radiation hardness of SiC based ions detectors for influence of the relative protons

Published:2001-12 Issue:1-4 Volume:184 Page:431-436
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ivanov A.M,Strokan N.B,Davydov D.V,Savkina N.S,Lebedev A.A,Mironov Yu.T,Riabov G.A,Ivanov E.M

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference7 articles.

1. 6H-SiC epilayers as nuclear particle detectors

2. Radiation hardness of silicon detectors – a challenge from high-energy physics

3. Radiation defects in n-6H-SiC irradiated with 8 MeV protons

4. Special features of alpha-particle detection with thin semi-insulating 6H-SiC films

5. Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance of 4H–SiC radiation detector after high flux proton and Fe13+ heavy ion beam irradiation;Journal of Radiation Research and Applied Sciences;2024-06

2. Chemical disorder of a-SiC layer induced in 6H-SiC by Cs and I ions co-implantation: Raman spectroscopy analysis;Applied Surface Science;2021-02

3. Study of Schottky barrier detectors based on a high quality 4H-SiC epitaxial layer with different thickness;Applied Surface Science;2021-01

4. Pinning Effect on Fermi Level in 4H-SiC Schottky Diode Caused by 40-MeV Si Ions;IEEE Transactions on Nuclear Science;2019-09

5. Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations;Semiconductor Science and Technology;2019-08-12

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