Thermodynamic analysis of the MOVPE growth of In Ga1−N
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
2. GaN Growth Using GaN Buffer Layer
3. Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductors
4. Solid composition of alloy semiconductors grown by MOVPE, MBE, VPE hand ALE
5. A. Koukitu, N. Takahashi, M. Narita and H. Seki, J. Solid State Electron., to be published.
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