Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates-Reference-Cited by-同舟云学术

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Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates

Published:2003-09 Issue:1-2 Volume:257 Page:19-30
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hartmann J.M.,Abbadie A.,Vinet M.,Clavelier L.,Holliger P.,Lafond D.,Séméria M.N.,Gentile P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference42 articles.

1. Germanium Silicon;Hull,1999

2. High-mobility Si and Ge structures

3. Si/SiGe/Si pMOS Performance - alloy scattering and other considerations

4. Ge-on-Si approaches to the detection of near-infrared light

5. SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition

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4. Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys;Inorganics;2024-03-30

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